inchange semiconductor isc product specification isc silicon npn power transistor 2SD873 description collector-emitter breakdown voltage- : v (br)ceo = 140v (min) high power dissipation high current capability applications high power amplifier applications. high power switching applications. dc-dc converter applications. regulator applications. absolute maximum ratings(t a =25 ) symbol parameter max unit v cbo collector-base voltage 160 v v ceo collector-emitter voltage 140 v v ebo emitter-base voltage 7 v i c collector current-continuous 16 a i b b base current-continuous 4 a p c collector power dissipation @t c =25 150 w t j junction temperature 175 t stg storage temperature range -65~175 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor 2SD873 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c = 50ma; i b = 0 140 v v ce (sat) collector-emitter saturation voltage i c = 8a; i b = 0.8a b 1.4 v v be (on) base-emitter on voltage i c = 8a; v ce = 4v 2.2 v i cbo collector cutoff current v cb = 140v; i e = 0 0.1 ma i ebo emitter cutoff current v eb = 7v; i c = 0 0.1 ma h fe-1 dc current gain i c = 8a; v ce = 4v 15 60 h fe-2 dc current gain i c = 16a; v ce = 4v 5 c ob output capacitance i e = 0; v cb = 10v; f test = 1.0mhz 350 pf f t current-gain?bandwidth product i c = 1a; v ce = 4v 1.5 mhz switching times t on turn-on time 2.5 s t stg storage time 4.5 t f fall time v cc = 50v, r l = 10 ,i b1 = -i b2 = 0.5a 1.4 isc website www.iscsemi.cn
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